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Phase change materials (PCMs) are important building blocks in solid-state memory and photonic devices. Solution-based processing promises large-area, cost-effective, conformal coating of optical PCMs (O-PCMs) for photonic applications. In this work, a solution processing route was developed for Ge₂Sb₂Se₄Te₁(GSST), a target PCM of interest due to its large optical contrast, broadband transparency, and improved glass-forming capability. An alkahest solvent mixture of ethanedithiol and ethylenediamine was used as a solvent system to fabricate solution-derived GSST thin films and films from these solutions were prepared and characterized using SEM, XRD, and Raman spectroscopy. 

The development of functional chalcogenide optical phase change materials holds significant promise for advancing optics and photonics applications. Our comprehensive investigation into the solution processing of Sb2Se3 thin films presents a systematic approach from solvent exploration to substrate coating through drop-casting methods and heat treatments. By employing characterization techniques such as scanning electron microscopy, dynamic light scattering, energy-dispersive X-ray spectroscopy, Raman spectroscopy, and X-ray diffraction, we reveal crucial insights into the structural, compositional, and morphological properties of the films as well as demonstrated techniques for control over these features to ensure requisite optical quality. Our findings, compared with currently reported deposition techniques, highlight the potential of solution deposition as a route for scalable Sb2Se3 film processing. 

Electrically tunable optical devices present diverse functionalities for manipulating electromagnetic waves by leveraging elements capable of reversibly switching between different optical states. This adaptability in adjusting their responses to electromagnetic waves after fabrication is crucial for developing more efficient and compact optical systems for a broad range of applications, including sensing, imaging, telecommunications, and data storage. Chalcogenide‐based phase‐change materials (PCMs) have shown great promise due to their stable, nonvolatile phase transition between amorphous and crystalline states. Nonetheless, optimizing the switching parameters of PCM devices and maintaining their stable operation over thousands of cycles with minimal variation can be challenging. Herein, the critical role of PCM pattern as well as electrical pulse form in achieving reliable and stable switching is reported on, extending the operational lifetime of the device beyond 13000 switching events. To achieve this, a computer‐aided algorithm that monitors optical changes in the device and adjusts the applied voltage in accordance with the phase transformation process is developed, thereby significantly enhancing the lifetime of these reconfigurable devices. The findings reveal that patterned PCM structures show significantly higher endurance compared to blanket PCM thin films. 

Measurements are presented of the cross-section for the central exclusive production ofJ/\psi\to\mu^+\mu^- $J/\psi \to {\mu }^{+}{\mu }^{-}$and\psi(2S)\to\mu^+\mu^- $\psi \left(2S\right)\to {\mu }^{+}{\mu }^{-}$processes in proton-proton collisions at\sqrt{s} = 13 \ \mathrm{TeV} $\sqrt{s}=13TeV$with 2016–2018 data. They are performed by requiring both muons to be in the LHCb acceptance (with pseudorapidity2<\eta_{\mu^±} < 4.5 $2<{\eta }_{{\mu }^{\pm }}<4.5$) and mesons in the rapidity range2.0 < y < 4.5 $2.0<y<4.5$. The integrated cross-section results are\sigma_{J/\psi\to\mu^+\mu^-}(2.0 ${\sigma }_{J/\psi \to {\mu }^{+}{\mu }^{-}}(2.0<y_{J/\psi }<4.5,2.0<{\eta }_{{\mu }^{\pm }}<4.5)=400\pm 2\pm 5\pm 12pb,{\sigma }_{\psi \left(2S\right)\to {\mu }^{+}{\mu }^{-}}(2.0<y_{\psi \left(2S\right)}<4.5,2.0<{\eta }_{{\mu }^{\pm }}<4.5)=9.40\pm 0.15\pm 0.13\pm 0.27pb,$where the uncertainties are statistical, systematic and due to the luminosity determination. In addition, a measurement of the ratio of\psi(2S) $\psi \left(2S\right)$andJ/\psi $J/\psi$cross-sections, at an average photon-proton centre-of-mass energy of1\ \mathrm{TeV} $1TeV$, is performed, giving$ = 0.1763 ± 0.0029 ± 0.0008 ± 0.0039,$$ where the first uncertainty is statistical, the second systematic and the third due to the knowledge of the involved branching fractions. For the first time, the dependence of theJ/\psi$ $J/\psi$and\psi(2S) $\psi \left(2S\right)$cross-sections on the total transverse momentum transfer is determined inpp $pp$collisions and is found consistent with the behaviour observed in electron-proton collisions.